High-voltage transistor with multi-layer conduction region

ABSTRACT

A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched therein. The one or more buried layers create an associated plurality of parallel JFET conduction channels in the extended portion of the well region. The parallel JFET conduction channels provide the HVFET with a low on-state resistance.

RELATED APPLICATIONS

This application is a continuation application of Ser. No. 09/574,563,filed May 17, 2000 now U.S. Pat. No. 6,570,219, which is a division ofSer. No. 09/245,030, filed Feb. 5, 1999 now U.S. Pat. No. 6,207,994,which is a continuation-in-part of Ser. No. 08/744,182, filed Nov. 5,1996 now abandoned.

FIELD OF THE INVENTION

The present invention relates to high voltage field-effect transistors.More specifically, the present invention relates to high voltagefield-effect transistor structures that include an insulated gatefield-effect transistor in series with a junction field-effecttransistor.

BACKGROUND OF THE INVENTION

It is conventional to construct a high-voltage, insulated-gate,field-effect transistor (HVFET) having a high breakdown voltage and alow “on-state” resistance. To accomplish this end, practitioners in theart have used an insulated gate field-effect transistor (IGFET) placedin series with a high-voltage junction field-effect transistor (JFET).Such a transistor is capable of switching at high voltages, has lowvalues of on-state resistance, and has insulated-gate control. Moreover,the HVFET may advantageously be fabricated near low voltage logictransistors on a single integrated circuit chip to form what is commonlyreferred to as a power integrated circuit (PIC).

One goal in the art is to produce a transistor with a high breakdownvoltage (V_(bd)) using as small a surface area as possible. The HVFETmust provide a V_(bd) that is above the minimum allowed for a givenapplication. Realizing high V_(bd) in a small area reduces the cost ofthe PIC. Traditional HVFET devices with a high breakdown voltage requirelarge amounts of silicon area and are expensive to fabricate.

It is also desirable to fabricate HVFETs that occupy as small a surfacearea as possible to realize a given on-state resistance. The figure ofmerit often used is known as specific on-resistance (R_(sp)), which isthe product of on-state resistance and surface area. A lower R_(sp)allows a smaller HVFET transistor to be used to meet the on-stateresistance requirements of a given application, which reduces the areaand, respectively, the cost of the PIC.

Another goal in the art is to provide a highly manufacturable HVFETdesign that consistently delivers the required combination of V_(bd) andR_(sp) over a range of normal process variances. To realize this goal,the manufacturing process should introduce minimal variance in thecritical device parameters, and the HVFET should exhibit minimalsensitivity to process variations.

To try to achieve the aforementioned goals, researchers and engineershave experimented with a variety of different device structures. Forexample, a lateral HVFET, is disclosed in “High Voltage Thin LayerDevices (RESURF Devices),” by Appels and Vaes, IEDM Tech. Digest, pp.238-241 (1979). This device is fabricated in accordance with the ReducedSurface Field (RESURF) principal, in which an extended drain region isused to support the high off-state voltage. The RESURF principal,however, mandates that the charge in the extended drain region, whichserves as the channel of a lateral junction field-effect transistor(JFET), be carefully controlled to obtain high V_(bd). To keep themaximum electric field below the critical field at which avalanchebreakdown occurs, the amount of charge in the JFET channel is typicallylimited to a maximum of about 1×10¹² cm⁻². When the HVFET is in the “on”state, the resistance of the JFET channel constitutes a large portion ofthe on-state resistance of the HVFET. Therefore, the limitation on themaximum charge in the JFET channel also sets the minimum specificon-resistance of the device.

A HVFET having an extended drain region with a top layer of aconductivity type opposite that of the extended drain region isdisclosed in U.S. Pat. No. 4,811,075. The '075 patent teaches that thisstructure approximately doubles the charge in the JFET channel of anHVFET, thereby lowering the R_(sp) by about 50%. Because this top layerhelps to deplete the extended drain when the extended drain issupporting a high voltage, a high breakdown voltage is maintaineddespite the increased charge density.

A HVFET in which two JFET channels are arranged in parallel to increasecharge and reduce R_(sp) is described in U.S. Pat. No. 5,313,082. Thisstructure has several drawbacks. First, proper charge balance among thelayers must be maintained in accordance with the RESURF principaldiscussed above. Secondly, according to the '082 patent the N-wellregion, the P-type buried region, and the upper N-type region are alldiffused from the surface. This makes it very difficult to maintainadequate charge balance among the layers. In addition, the heavily dopedp-n Junction between the buried layer and drain diffusion regiondegrades the V_(bd) of the device.

Thus, there still exists a need for an improved HVFET and a method offabricating the same. The HVFET should exhibit a low specific on-stateresistance, be easily integrated on the same chip along with low voltagelogic devices, achieve the required minimum breakdown voltage in thesmallest possible surface area, and be relatively inexpensive tomanufacture.

SUMMARY OF THE INVENTION

In one embodiment, the HVFET of the present invention comprises asubstrate of a first conductivity type. A first region of a secondconductivity type is disposed in the substrate. The first region havinga laterally extended portion that forms a lateral boundary with thesubstrate. A drain diffusion region of the second conductivity type isdisposed in the first region and is separated from the lateral boundaryby the laterally extended portion. A second region of the firstconductivity type is also disposed in the substrate and spaced-apartfrom the lateral boundary.

The HVFET also includes a source diffusion region of the secondconductivity type disposed in the second region. A channel region isformed between the source diffusion region and the lateral boundary. Aninsulated gate is disposed above the channel region to control currentflow therein. A buried region of the first conductivity type issandwiched within the laterally extended portion of the first region toform a junction field-effect structure in which current flows in thefirst region both above and below the buried region.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example, and notlimitation, in the figures of the accompanying drawings, wherein:

FIG. 1 is a cross-sectional side view of one embodiment of thehigh-voltage, field-effect transistor (HVFET) of the present invention.

FIG. 2 is a cross-sectional side view of another embodiment of thepresent invention.

FIG. 3 is a cross-sectional side view of still another embodiment of thepresent invention, which includes a plurality of buried layers.

FIG. 4 is a cross-sectional side view of an alternative embodiment ofthe present invention, which also includes a plurality of buried layers.

FIG. 5 is a cross-sectional side view of still another embodiment of thepresent invention.

FIG. 6 is a cross-sectional side view of still another embodiment of thepresent invention.

FIG. 7 is a top view of a HVFET having inter-digitated source and drain“fingertip” regions in accordance with one embodiment of the presentinvention,

FIG. 8 is a cross-sectional side view of the HVFET shown in FIG. 7 takenalong cut line B:B.

FIG. 9 is a cross-sectional side view of the HVFET shown in FIG. 7 takenalong cut line C:C.

FIG. 10 is a cross-sectional side view of the HVFET shown in FIG. 7taken along cut line D:D.

FIGS. 11a-11 l are cross-sectional side views that illustrate variousprocessing steps that may be used to fabricate a HVFET in accordancewith the present invention.

FIG. 12 is a plot of a typical impurity concentration profile within thelaterally extended drain portion of the HVFET of one embodiment of theinvention following the process steps illustrated in FIG. 11c.

FIG. 13 is a plot illustrating net impurity concentration profile aftercompensation for an HVFET with five JFET channels according to oneembodiment of the invention.

FIG. 14 is a cross-sectional side view of yet another embodiment of thepresent invention.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth,such as material types, doping levels, structures, processing steps,etc., in order to provide a thorough understanding of the presentinvention. Practitioners having ordinary skill in the semiconductor artswill understand that the invention may be practiced without many ofthese details. In other instances, well-known elements, techniques, andprocessing steps have not been described in detail to avoid obscuringthe invention.

The present invention relates to a high-voltage field-effect transistorthat provides a low on-state resistance for a given breakdown voltage.While n-channel HVFETs are presented herein for illustrative purposes, ap-channel HVFET can be fabricated by appropriate reversal of theconductivity types associated with the various regions and layers.

Device Structure

Referring now to FIG. 1, an exemplary n-channel HVFET is shown inaccordance with one embodiment of the present invention. It should beunderstood that the present invention equally contemplates an analogousp-channel HVFET. The p-channel transistor may be realized by utilizingthe opposite conductivity types for all of the illustrated diffusionregions.

FIG. 1 illustrates an insulated-gate, field-effect transistor (IGFET)having a gate 12 (comprised, for example, of polysilicon), an insulatinglayer 20, comprised of silicon dioxide or another appropriate dielectricinsulating material, and an underlying lightly-doped p-type substrateregion 16. Gate 12, insulating layer 20 and substrate 16 together formthe insulated gate region of the device. In one embodiment, the gateregion is a metal-oxide semiconductor (MOS), and the IGFET is a MOStransistor.

An optional p-type region 15 is disposed in substrate 16 spaced-apartfrom N-well region 17. Additionally, a p-type buried layer 35 may beincluded beneath P-well 15. A N+ source diffusion region 14 is shownformed in region 15. An IGFET channel region 28 is formed between N+source diffusion region 14 and N-well region 17. A source electrode 10provides an electrical connection to N+ source diffusion region 14.Similarly, a drain electrode 11 connects to a N+ drain diffusion region19. Source and drain electrodes 10 and 11 may comprise a number ofwidely used metals or metal alloys. Source electrode 10 is shownextending over an insulative layer 27 formed over gate 12 where itfunctions as a field plate.

In the illustrative embodiment, a P+ diffusion region 13 is disposedadjacent to N+ source diffusion region 14. Diffusion region 13 increasesthe integrity of the source-to-substrate connection and reducessusceptibility of the device to parasitic bipolar effects.

The HVFET of FIG. 1 also includes an N-well region 17 having a laterallyextended drain portion 23 with a lateral boundary 21 formed withinsubstrate 16. Disposed within N-well region 17 is a p-type buried region18, and drain diffusion region 19. Buried region 18 is sandwiched withinN-well region 17 in the laterally extended drain portion 23. As can beseen, buried region 18 is surrounded above, below and laterally byN-well region 17. The embodiment of FIG. 1 also shows buried region 18separated from N+ drain diffusion region 19 by a portion of the N-wellregion 17 to improve the breakdown voltage of the transistor.

A drain electrode 11 provides an electrical connection to N+ draindiffusion region 19. Note that drain electrode 11 also connects to afield plate member 26, which is insulated from the substrate and islocated adjacent to drain diffusion region 19 over N-well region 17.Like the extended portion of source electrode 10, field plate member 26acts to reduce peaks in the localized electric field, thereby increasingthe breakdown voltage of the transistor.

When the HVFET is in the on-state, electron current flows from thesource diffusion region 14 through the IGFET channel region 28, and thenthrough dual, parallel JFET channels, formed by the N-above region 24and the N-below region 25, and finally to drain diffusion region 19. Asdescribed below, the combined charge in the N-above and N-below regions24 & 25 may be about 3×10¹² cm⁻², which is about three times higher thanthat of a conventional, single JFET channel device. Thus, the resistanceof the extended drain region is reduced to about ⅓ that of aconventional device.

As will be described below, other embodiments of the invention compriseadditional JFET channels in the N-well region 17 formed by a pluralityof p-type buried layers. Thus, the following discussion of features tothe invention in which only a single P-buried region lies within theN-well region applies equally to embodiments possessing a plurality ofP-buried regions in the N-well region.

In the off-state, N-above region 24, buried region 18, N-below region25, and a portion of the substrate 16 are mutually depleted of freecarriers. In order to keep the electric field below the criticalelectric field at which avalanche breakdown occurs, the charge in eachlayer is balanced. For example, the charge concentration isapproximately 1×10¹² cm⁻² in N-above region 24, about 2×10¹² cm⁻²inburied region 18, and about 2×10¹² cm⁻² in N-below region 25.

In one implementation, buried region 18 is not left floating(electrically), but instead is connected to substrate 16 or anotherregion having substantially the same potential. Substrate 16 istypically connected to ground, which provides the double-sided JFET withenhanced switching characteristics.

As discussed above, the HVFET of FIG. 1 may include an additional region15 into which the N+ source diffusion region 14 and the P+ diffusionregion 13 are diffused. One function of region 15 is to reduce thesusceptibility of the HVFET to drain-to-source punch-through. Anotherfunction is to provide an appropriate threshold voltage for the IGFETwith less variance. Region 15 also lowers the base resistance of theparasitic NPN device and, thereby increases the safe operating area ofthe HVFET.

The embodiment of FIG. 1 may also include a p-type buried layer 35underlying the N+ source diffusion region 14 and the P+ diffusion region13. Note that this region can be formed with the same implant step asp-type buried region 18, so as to minimize the cost and complexity ofthe process. Buried layer 35 offers the same advantages as thosedescribed above for P-region 15. However, buried layer 35 can be moreheavily doped than region 15 because it is removed from the IGFETchannel region and, therefore, does not affect the threshold voltage ofthe IGFET. Being more heavily doped, this layer is also effective inpreventing parasitic NPN action.

Another embodiment of the invention is shown in FIG. 2. This embodimentdiffers from that of FIG. 1 only in the thickness of the oxide above thelaterally extended portion 23 of N-well region 17. In FIG. 1, a uniform,thin film of oxide 36 is employed. The IGFET gate oxide may be used,which has a typical thickness of 200-1000 angstroms. One advantage ofusing such thin oxide is that it reduces the required energy for thep-type buried implant used to form region 18.

In contrast, the device of FIG. 2 shows a thicker oxide layer 40(typically 5000-15000 angstroms) above most of the laterally extendeddrift portion 23 of N-well region 17. One benefit of thick oxide layer40 is that it provides an additional level when designing the source anddrain field plates that extend from the source and drain electrodes.Thick oxide layer 40 may also provide higher yield and reliability. Itshould be understood, however, that the inclusion of the overlying oxidelayer, or the thickness thereof, is not an essential aspect of thepresent invention. In certain embodiments, it may be eliminatedentirely, or substituted with other suitable materials such as siliconnitride, etc.

FIG. 3 shows another embodiment of the invention in which a plurality ofJFET conduction channels 41 are formed in the N-well region 17. Otheraspects and features of this embodiment are similar to the embodimentwith dual JFET channels illustrated in FIGS. 1 and 2. For example, drainelectrode 11 connects to a drain diffusion region 19 and includes afield plate member 45 that covers part of laterally extended portion 23.Similarly, source electrode 11 is electrically connected to N+ sourcediffusion region 14 and P+ diffusion region 13. Source electrode alsoincludes a metal field plate member that extends over the channel regionof the IGFET. Surrounding N+ source diffusion region 14 and P+ diffusionregion 13, a p-type region 15 is optionally included to preventpunch-though. Gate 12 controls current flow in the IGFET channel regionformed between N+ source diffusion region 14 and N-well region 17.

A thick oxide layer 40 may optionally overlie laterally extended portion23 of N-well region 17. The drain field plate 45, which may beconstructed from polysilicon or other suitable materials, is separatedfrom an overlying portion of drain metal 11 by the inter-leveldielectric layer 50.

With continuing reference to FIG. 3, two or more p-type buried regions60 are disposed within N-well region 17. Regions 60 may be formed, forexample, by high-energy ion implantation. This results in an N-wellregion 17 that is divided into multiple JFET conduction channels (e.g.,N₁-N_(k+1)) interleaved with the P-buried regions 60. The implantenergies and doses may be chosen such that the maximum charge in theuppermost conduction channel (N₁) is limited to about 1×10¹²/cm², inorder to keep the maximum electric field at the N₁/PB₁ junction belowthe critical electric field at which avalanche breakdown occurs. Themaximum charge in each P-buried regions (PB₁-PB_(k)) and each of theremaining JFET channels (N₂-N_(k+1)) is limited to about 2×10¹²/cm² inthe embodiment of FIG. 3.

Those of ordinary skill in the art will appreciate that to construct aN-well region 17 with a plurality of JFET conduction channels, thedoping and implant energy levels of the N-well and the plurality ofP-buried regions may be chosen to approximate the above-described chargelevels. Although the uppermost buried region 60 (labeled “PB1”) isillustrated as lying below the upper surface of the N-well region 17,this particular region may also be disposed at the upper surface of theN-well region 17.

With attention directed to FIG. 4, an embodiment of the invention isillustrated in which p-type region 60 denoted PB1 is formed coincidentwith, and just below, the upper surface of the N-well region 17. In theembodiment of FIG. 4 the number of JFET channels is equal to the numberof P-buried regions 60. The charge in the uppermost P-buried layer PB1is constrained to about 1×10²/cm², while the charge in each of theremaining P-buried regions and the charge in each of the JFET channels41 is constrained to about 2×10¹²/cm².

Because the resistance of the JFET channels 41 is inversely proportionalto the total charge in these channels, each additional P-buried region60 results in a reduction in on-resistance of the HVFET. For example,FIG. 4 shows a plurality of k buried regions 60 implanted into N-wellregion 17. As a result, there exist k JFET conduction channels 41 formedin N-well region 17. Thus, the embodiments illustrated in FIGS. 3 and 4may achieve a much lower on-resistance at the same breakdown voltageachieved by prior art devices.

FIGS. 3 and 4 also show the optional inclusion of additional p-typeburied regions 65 formed vertically spaced-apart from one anotherbeneath the source diffusion regions 13 and 14. To avoid affecting thesplitting of the current in the various JFET conduction channels, theadditional buried regions 65 are spaced laterally from buried regions 60formed in the extended portion 23 of N-well 17. The additional regions65 counteract the penetration of drain potential into the IGFET channelregion. This means that the source diffusion regions 13 and 14 may befabricated closer to the N-well region 17, advantageously resulting in aHVFET with a reduced IGFET channel length.

Another embodiment of the invention is illustrated in FIG. 5. Similar tothe previous embodiments, this structure comprises an HVFET having adrain electrode 11 connected to a field plate 26, a drain diffusionregion 19, a source electrode 10 (also having an extended field plate),source diffusion regions 13 and 14, substrate 16, and a p-type buriedregion 18. The embodiment shown in FIG. 5 differs from the previousembodiments in that it does not include an N-well region 17. Rather, thestructure of FIG. 5 comprises a n-type layer 106, which may be formed byepitaxial deposition onto substrate 16. Alternatively, ion implantationand diffusion may be utilized to form layer 106 in substrate 16. Layer106, like previous embodiments, includes a laterally extended portion 23into which is sandwiched a buried layer 18.

A p-type diffusion region 110 is formed within the n-type layer 106 andis disposed under source diffusion regions 13 and 14. Region 110provides an IGFET channel region 28 disposed under gate 12 betweensource diffusion region 14 and n-type layer 106. Region 110 alsoprovides protection from the occurrence of drain-to-sourcepunch-through. The P-buried region 18 disposed within n-type layer 106acts as an effective gate for a parallel-configured JFET having dualcurrent channels.

In the case where layer 106 is formed by epitaxial deposition, the HVFETstructure may be formed by a single high-energy implant to form region16. A P+ isolation region 109 may be needed where layer 106 is formed byepitaxial deposition. On the other hand, in the case where n-type layer106 is formed by implantation, P+ isolation region 109 may not berequired. An additional p-type buried layer 35 may be implantedunderneath the source diffusion regions 13 and 14 to preventpunch-through. This permits realization of an IGFET with reduced channellength; it also reduces the susceptibility of the device structure toparasitic NPN action.

FIG. 6 depicts a cross-sectional view of another embodiment of thepresent invention which includes n-type layer 106, which may be formedby epitaxial deposition onto, or implantation and diffusion into, p-typesubstrate 16. A p-type diffusion region 111 formed within n-type layer106 serves as the IGFET channel region 120 and provides protection fromthe occurrence of drain-to-source punch-through. In this embodiment theIGFET channel region 120 is formed in a circular, rectilinear orhemispherical shape between regions 14 and 106. Dual JFET channels areprovided for current flow through the N-above region 24 and the N-belowregion 25.

The presence of the additional IGFET channel region in the embodiment ofFIG. 6 provides about twice the IGFET channel width for a given HVFETwidth compared to previous embodiments. It also has advantages of lowerIGFET channel resistance and higher IGFET saturation current compared toother embodiments. While only a single p-type buried layer 18 isillustrated, additional p-type buried layers may be included asdiscussed previously.

In an alternative embodiment of the present invention, the buried regionmay be formed with a plurality of openings that vertically connect theabove conduction region to the below region, thereby permitting currentto flow between the above and below region through the openings. FIG. 14is a cross-sectional side view of this embodiment, which shows a p-typeburied layer 88 extending through N-well region 17 and under diffusionregions 13 and 14 of the device. Buried layer 88 includes openings 81that connect the N-above region 72 to the N-below region 73 to form dualJFET conduction channels. Note that one of the openings is locatedadjacent to gate 12. Practitioners in the art will appreciate that theembodiment of FIG. 14 advantageously permits the design of short IGFETchannel lengths.

In the embodiment of FIG. 14, buried layer 88 may be connected to groundpotential via substrate 16 to ensure optimal switching characteristicsfor the device. Also, it should be understood that the breakdown voltageof the HVFET can be increased by locating one of the openings 81 closeto the drain diffusion region 19.

The location, size, shape, and number of openings 81 may varyconsiderably in the embodiment of FIG. 14. For example, openings 81 maybe hexagonal, rectilinear, circular, triangular, or some other shape.Individual ones of the openings may also vary with respect to eachother. Additionally, the location, size, shape and number of openingsmay be arranged to create a variety of patterns (e.g., checkerboard) inburied layer 88. Those of ordinary skill in the art will furtherunderstand that the effective charges in the N-above region 72, N-belowregion 73, and buried layer 88 can be adjusted such that buried layer 88depletes in a three-dimensional fashion. For instance, a sphericalp-type buried layer can deplete n-type charges around it in athree-dimensional fashion. Thus, a spherically or other shaped buriedlayer can be formed to take advantage of multi-dimensional depletions.

With reference now to FIG. 7, a top view of a HVFET 500 havinginter-digitated source and drain “fingertip” regions is illustrated.Various cross-sectional side views of the device structure are shown inFIGS. 3, 8, 9 and 10. (Note that FIG. 3 is a view taken along cut lineA:A of FIG. 7. FIGS. 1, 2, 4, 5, and 6 also show other possiblecross-sectional views taken through line A:A.) FIG. 7 shows HVFET 500having a source fingertip 505 that includes a source electrode 10.Disposed on either side of source electrode 510 are drain fingertips 515and 520 included in drain electrode 11. Further disposed on either sideof source electrode 10 are additional source electrodes 530 and 535.Gate 12, which may be constructed of polysilicon or other suitablematerials, is located adjacent source electrode 10. Similarly, gates 545and 550 are adjacent additional source electrodes 530 and 535.

During operation of the HVFET 500, current flows from the source regionto the drain region through the IGFET channel region and then throughthe plurality of parallel-arranged JFET conduction channels disposedwithin N-well region 17. The electric field in the inter-digitated HVFET500 tends to be highest at the source fingertip 505 and drain fingertips520 and 515 due to the small radius of each fingertip. To alleviatevoltage breakdown in these regions, a source fingertip buffer region (orhole) 560 may be created in N-well region 17 surrounding the sourcefingertip 505. Buffer region 560 is similar in function to area 60 shownin FIG. 3 of U.S. Pat. No. 5,258,636 which patent is herein incorporatedby reference.

With continued reference to FIGS. 7-10, field plate extensions 553 and555 counteract voltage breakdown at drain fingertips 515 and 520. Fieldplate extensions 553 and 555 overlay and are separated from thepolysilicon drain field plate 45 by an inter-level dielectric layer 50(see FIG. 9). Note that along the sides of drain fingertips 515 and 520,drain field plate 11 has a substantially shorter extension beyond thepolysilicon drain field plate 45 towards the source electrode 10. Thisis illustrated in, for example, in the previously describedcross-section taken along cut line A:A in FIG. 3.

FIG. 9 is a cross-sectional side view taken along line C:C of FIG. 8.Here, at drain fingertip 520, drain electrode 11 includes a drain fieldplate extension 555 to mollify the high electric field in this area. Ascan be seen, the drain electrode 11 has a portion that overlies thedrain field plate 45 and extends laterally over the buried regions 60.In one implementation; field plate 555 extends laterally a distance (X)of approximately 20-80 microns past the end of drain field plate 45.This is a considerably larger extension than is found along line A:A ofFIG. 3, which may be, for example 10-20 microns. In this example thedrain fingertip radii (defined from the axis of rotation to the farthestedge of drain diffusion region 19) may be 5 microns or less. FabricatingHVFET 500 with a small fingertip radius, of course, reduces the requiredsilicon area for the transistor and thus lowers its cost.

Other than the buffer region 560 discussed above, the device structureat source fingertip 505 is similar to that illustrated in FIG. 3. Forexample, a drain diffusion region 19 is disposed underneath drainelectrode 11. Similarly, source diffusion regions 13 and 14 are disposedunderneath source electrode 10. A p-type region 15 may optionallysurround source diffusion regions to prevent punch-through. In addition,additional P-buried regions 65 may be formed beneath the sourcediffusion region, as explained with respect to FIG. 3.

FIG. 9 is a cross-sectional side view taken along line C:C of FIG. 8.Here, a drain fingertip 520, drain electrode 11 includes a drain fieldplate extension 555 to mollify the high electric field in this area. Ascan be seen, the drain electrode 11 has a portion that overlies thepolysilicon drain field plate 45 and extends laterally over the buriedregions 60. In one implementation, field plate 555 extends laterally adistance (X) of approximately 20-50 microns past the end of drain fieldplate 45. This is a considerably larger extension than is found alongline A:A of FIG. 3, which may be, for example 10-20 microns. In thisexample the drain fingertip radii may be 5 microns or less. FabricatingHVFET 500 with a small fingertip radius, of course, reduces the requiredsilicon area for the transistor and thus lowers its cost.

FIG. 10 is a cross-sectional view taken along cut line D:D of FIG. 7.This view shows a JFET tap 542, which provides an electrical connectionto N-well 17, so that the drain voltage and/or current of the HVFET canbe safely coupled to a control circuit. JFET tap 542 typically comprisesa metal or metal alloy and extends down through inter-dielectric layer50 to contact an N+ diffusion region 700. The N+ diffusion region 700 islocated near a perimeter boundary of the N-well region 17. In thisembodiment, JFET tap 542 is laterally separated from the active IGFETchannel areas to avoid interfering with normal device operation.

When HVFET 500 is in the off state, JFET tap 542 provides a convenientpower source for control circuitry and the like. Despite voltages of upto 700 volts at the drain, JFET conduction channels 41 pinch-off andkeep the voltage at JFET tap 542 from exceeding approximately 10-100volts. When HVFET 500 is in the on state, JFET tap 542 can be used tosense the drain voltage. This connection is therefore useful inapplications where current limiting or similar functions are important.

Device Fabrication

The processing steps and techniques described below may be appropriatelyemployed to fabricate the various device structures disclosed above.Starting with an ordinary p-type substrate 121, FIG. 11a is across-sectional view of the substrate following formation of the N-wellregion 123. N-well 123 may be defined using conventionalphotolithography followed by implantation of a n-type dopant such asphosphorus. A typical implant dose is in the range of 5×10¹²/cm² to5×10¹³/cm² and implant energy of 150 keV. The dose is chosen to providethe proper amount of charge in each of the JFET channel regions.Therefore the dose selected for a particular implementation depends onthe actual number of JFET channels to be formed. Following implantation,the dopant is driven into substrate 121 to a depth of approximately 5-15μm.

An optional step in the invented process is the formation of oxide layer125 as shown in FIG. 11b. Depending on the desired device structure, thelaterally extended portion of the drain may either be entirely coveredby oxide (as shown), partially covered, or completely free of oxide. Byway of example, a typical thickness of oxide layer 125 is about 8000angstroms.

Next, definition of p-type buried layer 130 is achieved using ordinaryphotolithography steps and one or more ion implantation steps thatintroduce a p-type dopant such as boron into the N well region 123. Thedose and energy for each of the ion implantations are chosen to providethe required amount of charge in each of the buried layers 130, and alsoin the corresponding JFET conduction channels.

A cross-sectional view of the semiconductor substrate after formation ofa single buried layer 130 is illustrated in FIG. 11c. The buried layer130 may be formed using an implant dose of about 4×10¹²/cm² with energyof about 1250 keV. At this dose and energy, a top JFET conductionchannel 122 is produced above buried layer 130. A bottom JFET conductionchannel 124 is produced underneath buried layer 130.

Another option is to form an additional p-type buried layer 132 withinsubstrate 121 outside of the N-well region 123. The buried layer 132 maybe formed using the same mask, and by the same ion implantation, as isused to form buried layer 130 within the N-well region 123. Thus, theformation of the additional buried layer 132 does not require anadditional implantation step. Additional buried layer 132 providesdevice performance advantages such as reduced susceptibility todrain-to-source punch-through.

As discussed earlier, formation of oxide layer 125 over the laterallyextended portion of N-well region 123 is an optional step of the processof the present invention. Several benefits of not forming oxide layer125 include reduced processing costs and a reduction in the energyrequired to implant the underlying buried layers. For example, withoutoxide layer 125 an implant energy level of about 800 keV may be suitableto form a single buried layer 130.

For a given implantation energy, the thickness of oxide layer 125affects the depth of buried layer 130 within N-well region 123. Thismeans that variations in the thickness of oxide layer 125 can beutilized to purposefully vary the depth of buried layer 130. Moreover,the thickness of oxide layer 125 may be varied either continuously(sloped) or discontinuously (abrupt).

FIG. 11d is a cross-sectional view that illustrates how discontinuousthickness variations in oxide layer 125 may be utilized to achieve adiscontinuous buried layer 130 comprising multiple buried layer sections130 a & 130 b disposed at different depths within N-well region 123.Using a single implantation step through a two-tiered oxide layer(comprising sections 125 a and 125 b) produces buried layer sections 130a formed at a relatively shallow depth, and buried layer sections 130 bformed relatively deep within N-well region 123. In the areas where theoxide layer is relatively thin (125 b) the underlying buried layersections 130 b are located deep. On the other hand, in the areas wherethe oxide layer is relatively thick (125 a) the underlying buried layersections 130 a are located relatively shallow. Thus, by employing asingle P-buried implant, multiple buried layer sections can be createdat differing depths within N-well region 123.

FIG. 11e illustrates a cross-sectional view of the structure of FIG. 11bfollowing high-energy ion implantation into N-well region 123 to createmultiple buried layers 150 (PB₁-PB_(k)). As can be seen, this producesan associated plurality of JFET conduction channels 160 (N₁-N_(k+1))interleaved with buried layers 150. In an exemplary embodiment, theimplant energies and doses are chosen such that the charge in theuppermost conduction channel 160 (N₁) is about 1×0¹²/cm². This keeps themaximum electric field at the N₁/PB₁ junction below the criticalelectric field at which avalanche breakdown occurs. By the samerequirement, the charge in each underlying buried layer 150 (PB₁-PB_(k))and in each of the underlying JFET conduction channels 160 (N₂-N_(k+1))is about 2×10¹²/cm².

As shown in FIG. 3, and discussed previously, the same implant step thatforms buried layers 150 may be used to simultaneously form additionalburied layers 155 (PB₁′-PB_(k)′) in the substrate 121 beneath the sourceregion. In other words, the same mask layer that is used to form buriedlayers 150 within the N-well region 123 can be used to form additionalburied layers 155. Thus, the formation of the additional p-type buriedlayers 155 does not require additional implantation steps beyond thoseneeded to form the p-type buried layers 150.

FIG. 11f illustrates a device structure similar to that of FIG. 11e,except that in FIG. 11e the uppermost buried layer 150 (PB1) is formedjust under the surface of the N-well region 123. This is accomplished byappropriate reduction of the implant energies used to form each of theburied layers 150. Note that in this embodiment the number of JFETconduction channels 160 is identical to the number of buried layers 150.For example, the maximum charge in the uppermost P-buried layer 150(PB1) is approximately 1×10¹²/cm², while the maximum charge in each ofthe remaining P-buried layers 150 (and the charge in each of the JFETconduction channels 160) is approximately 2×10¹²/cm².

The remaining processing steps are similar regardless of whether thelaterally extended portion of N-well region 123 is formed with a singleburied layer, multiple buried layers, or regardless of the thickness ofthe overlying oxide layer. Furthermore, it should be understood that thelaterally extended portion of N-well region 123 may also advantageouslycomprise the high-voltage portion of other lateral power devices. Forexample, high-power diodes, JFETs, LIGBTs, and so on may also beincorporated in the laterally extended portion of N-well region 123.

In the method of manufacturing a high-voltage IGFET, the growth ordeposition of a thin gate oxide layer 170 follows the previouslydescribed high-energy implantation step (or steps). After formation ofgate oxide layer 170, polysilicon field plate and gate 126 may bedeposited and patterned. FIG. 11g shows a cross-sectional view of thesemiconductor substrate following completion of these steps.

Next, the substrate surface is appropriately masked and a dopant such asarsenic or phosphorous is implanted to form N+ source diffusion region128 and N+ drain diffusion region 131, as shown in FIG. 11h. At thispoint in the process, an optional P+ region 135 may be created adjacentto the source diffusion region 128 by ion implantation. Practitioners inthe semiconductor fabrication arts will understand that it may bedesirable to also form a P+ region adjacent to drain diffusion region131.

Following formation of the source and drain diffusion regions, aninter-level dielectric layer 132 may be deposited (and then densified orreflowed, if necessary) as illustrated in FIG. 11i. By way of example,dielectric layer 132 may comprise a low-temperature oxide (LTO).

Conventional photolithography and etching steps are employed to formcontacts to the source and drain regions. A suitable conductivematerial, such as an aluminum or titanium alloy is commonly depositedand patterned to form the source and drain electrodes 134 and 135,respectively. Deposition of a passivation layer 136 and definition ofpad openings complete the process. A cross-sectional view of the HVFETfollowing the passivation step is shown in FIG. 11i.

FIG. 12 is a plot of a typical impurity concentration profile within thelaterally extended drain portion of the HVFET following the processsteps illustrated in FIG. 11c. FIG. 12 is for illustrative purposesonly, and is not intended to limit the invention to the quantitiesdescribed therein. The vertical axis of the graph represents the ionconcentration represented as the logarithm of the number of ions percubic centimeter. The horizontal axis of the graph represents thevertical distance (depth) into the semiconductor substrate 121. Thedepth is measured in microns from the semiconductor substrate surface.

The uncompensated impurity profile produced by the implantation anddiffusion of the n-type laterally extended portion of N-well region 123is represented by line 201. The uncompensated impurity profile producedby the high-energy implantation and diffusion of the p-type buriedregion 130 sandwiched within N-well region 123 is represented by line202. Line 203 represents the net concentration of impurities aftercompensation has occurred. As evidenced by the similarity of line 203 tolines 201 and 202, the net effect of compensation is minimal. In otherwords, the method of the present invention provides for charge matchingat low N-well doping levels. This advantageously results in a reducedamount of carrier scattering, as well as reduction in other undesirableside effects associated with processes involving multiple diffusionsfrom the surface.

FIG. 12 shows the peak concentration of buried layer 130 below thesurface of the laterally extended portion of the drain region 123. Itshould be understood that the depth of the peak concentration isdetermined primarily by implant energy. The plot of FIG. 12 also showsthat buried region 130 is only about 1 um wide, which is primarily afunction of the straggle of the high-energy implant and thetime/temperature of subsequent diffusion steps.

FIG. 12 also illustrates N-top region 122 (see FIG. 11c) being formed inthe region from about 0 to 0.5 μm below the surface of the substrate.The region between about 2.0 to 8.0 μm represents N-bottom region 124.The region between about 0.5 to 2.0 μm represents p-type buried region130. According to the method of the present invention, the thickness ofeach region and the charge contained in each region may be selectedindependently by varying the energy and dose used to form N-well region123 and buried region 130.

FIG. 13 is a plot illustrating the net impurity concentration profileafter compensation for an HVFET with five JFET channels formed by foursuccessive p-type buried implants. The vertical axis represents the ionlog concentration and the horizontal axis represents the verticaldistance into the semiconductor substrate as measured from the surface.The dose and energy of the N-well implant and each buried layer implantare chosen to provide the appropriate doping in each layer, aspreviously described.

Although the processing steps in the foregoing description are forfabrication of a n-channel HVFET, it is appreciated that a p-channelHVFET can be realized by simple reversal of the conductivity typesemployed to form the various regions/layers.

Many other modifications are also within the scope of the invention. Forexample, rather than forming the N-well region by implanting anddiffusing as described above, this region may be formed by epitaxialdeposition, followed by high-energy implantation of the p-type dopantused to form the buried layers. In another variation, rather thanimplanting p-type dopant into a N-well, the n-type JFET conductionchannels of the N-well region may be formed by high-energy implantationinto an appropriately doped p-type diffusion or substrate region. Thisproduces n-type doping around p-type buried regions.

Therefore, it should be understood that although the present inventionhas been described in conjunction with specific embodiments, numerousmodifications and alterations are well within the scope of the presentinvention. Accordingly, the specification and drawings are to beregarded in an illustrative rather than a restrictive sense.

What is claimed is:
 1. A high voltage field-effect transistor (HVFET)comprising: a substrate of a first conductivity type; a first region ofa second conductivity type disposed in the substrate; a source region ofthe second conductivity type disposed in the substrate spaced-apart fromthe first region, a channel region being formed between the sourceregion and the first region; a drain region of the second conductivitytype disposed in the first region; a buried region of the firstconductivity type disposed within the first region, a first conductionchannel being formed in an upper region above the buried region and asecond conduction channel being formed in a lower region below theburied region, the buried region being spaced-apart from the drainregion; and an insulated gate formed over the channel region, whereinsaid upper region is a part of said first region and extends from saidburied region to a top edge of said first region; said lower region is apart of said first region and extends from said buried region to abottom edge of said first region; and, wherein said buried region has alateral width and a vertical thickness; and said lateral width issubstantially greater than said vertical thickness.
 2. The HVFETaccording to claim 1 further comprising: a second region of the firstconductivity type disposed in the substrate, the source region beingdisposed in the second region.
 3. The HVFET according to claim 2 furthercomprising: a third region of the first conductivity type disposed inthe second region adjacent to the source region.
 4. The HVFET accordingto claim 1 wherein the buried region is connected to the substrate. 5.HVFET according to claim 1 further comprising: a second buried region ofthe first conductivity type disposed within the substrate beneath thesource region.
 6. The HVFET according to claim 5 wherein the secondburied region extends under the channel region.
 7. The HVFET accordingto claim 1 wherein the first and second conductivity types are p-typeand n-type, respectively.